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| APTGT50H120T3 Full - Bridge 13 14 Trench IGBT(R) Power Module VCES = 1200V IC = 50A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of twice the current capability Q1 18 19 CR1 CR3 Q3 11 10 22 23 Q2 7 8 CR4 Q4 26 27 CR2 4 3 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25C TC = 80C TC = 25C TC = 25C TJ = 125C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-5 APTGT50H120T3 - Rev 0, Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area Max ratings 1200 75 50 100 20 270 100A @ 1150V Unit V A V W September, 2004 APTGT50H120T3 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 2mA VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min 1200 1.4 5.0 Typ Max 5 2.1 6.5 400 Unit V mA V V nA 1.7 2.0 5.8 Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A R G = 18 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A R G = 18 Min Typ 3600 160 90 30 420 70 90 50 520 90 5 5.5 Max Unit pF ns ns mJ Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 70C Min 1200 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage VR=1200V 50% duty cycle trr Qrr Reverse Recovery Time Reverse Recovery Charge IF = 60A VR = 800V di/dt =200A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 400 470 1200 4000 ns nC APT website - http://www.advancedpower.com 2-5 APTGT50H120T3 - Rev 0, September, 2004 IF = 60A IF = 120A IF = 60A Tj = 125C 60 2 2.3 1.8 2.5 V APTGT50H120T3 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K Min Typ 68 4080 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.45 0.9 150 125 100 4.7 110 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 To heatsink M4 Package outline 1 12 APT website - http://www.advancedpower.com 3-5 APTGT50H120T3 - Rev 0, September, 2004 17 28 APTGT50H120T3 Typical Performance Curve 100 80 T J=125C Output Characteristics (VGE=15V) TJ=25C Output Characteristics 100 T J = 125C 80 IC (A) 60 40 20 0 V GE=17V VGE=13V VGE=15V VGE=9V IC (A) 60 40 20 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 0 1 2 V CE (V) 3 4 100 80 60 40 20 0 5 Transfert Characteristics 12 T J=25C T J=125C Energy losses vs Collector Current V CE = 600V V GE = 15V RG = 18 T J = 125C Eoff 10 8 E (mJ) 6 IC (A) Eon 4 2 0 6 7 8 9 VGE (V) 10 11 12 10 30 50 IC (A) Reverse Safe Operating Area 120 Eon 70 90 110 Switching Energy Losses vs Gate Resistance 12 11 10 E (mJ) 9 8 7 6 5 4 0 20 40 60 Gate Resistance (ohms) 80 Eoff VCE = 600V VGE =15V IC = 50A TJ = 125C 100 80 IC (A) 60 40 20 0 0 400 800 V CE (V) 1200 1600 V GE=15V T J=125C RG=18 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 Thermal Impedance (C/W) IGBT Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website - http://www.advancedpower.com 4-5 APTGT50H120T3 - Rev 0, September, 2004 APTGT50H120T3 Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80 VCE=600V D=50% RG=18 TJ=125C TC=75C ZVS Forward Characteristic of diode 160 140 120 100 IC (A) 80 60 40 20 0 TJ =25C TJ=125C 60 40 ZCS 20 hard switching 0 0 10 20 30 IC (A) 40 50 60 0 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.5 0.4 0.2 0.3 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7 Diode 0.1 0.05 0 0.00001 rectangular Pulse Duration (Seconds) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT50H120T3 - Rev 0, September, 2004 |
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